The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2010

Filed:

Apr. 15, 2005
Applicants:

Inna Patrick, Boise, ID (US);

Sungkwon C. Hong, Boise, ID (US);

Jeffrey A. Mckee, Meridian, ID (US);

Inventors:

Inna Patrick, Boise, ID (US);

Sungkwon C. Hong, Boise, ID (US);

Jeffrey A. McKee, Meridian, ID (US);

Assignee:

Aptina Imaging Corporation, Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

The exemplary embodiments provide an imager with dual conversion gain charge storage and thus, improved dynamic range. A dual conversion gain element (e.g., Schottky diode) is coupled between a floating diffusion region and a respective capacitor. The dual conversion gain element switches in the capacitance of the capacitor, in response to charge stored at the floating diffusion region, to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In an additional aspect, the exemplary embodiments provide an ohmic contact between the gate of a source follower transistor and the floating diffusion region which assists in the readout of the dual conversion gain output signal of a pixel.


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