Inna Patrick

Title: Inna Patrick: Innovator in CMOS Image Sensor Technology

Introduction

Inna Patrick is a notable inventor based in Tainan, Taiwan. She has made significant contributions to the field of imaging technology, particularly in the development of complementary metal-oxide-semiconductor (CMOS) image sensors. With a total of 4 patents to her name, her work continues to influence advancements in this area.

Latest Patents

Inna Patrick's latest patents include innovative designs for CMOS image sensors and photodiodes. One of her patents describes a photodiode (PD) of a CMOS image sensor that features a top PD of a second type disposed in a first-type layer. Additionally, it includes a bottom PD of the second type located below the top PD, which consists of at least one sub-photodiode (sub-PD) connected to the top PD and at least one sub-well of the first type surrounded by the sub-PD. Another patent focuses on a CMOS image sensor that incorporates an implant region of a second type formed in a crystalline layer of a first type. This design includes a transfer gate channel that entirely covers the implant region, which partially joins a photodiode, a doped well, and a floating diffusion node.

Career Highlights

Inna Patrick is currently employed at Himax Imaging, Inc., where she continues to push the boundaries of imaging technology. Her work has garnered attention for its innovative approach and practical applications in the industry.

Collaborations

In her career, Inna has collaborated with talented individuals such as Yang Wu and Feixia Yu. These partnerships have contributed to her success and the advancement of her projects.

Conclusion

Inna Patrick stands out as a pioneering inventor in the field of CMOS image sensors. Her contributions and innovative patents are shaping the future of imaging technology.