Injun Hwang

Title: Injun Hwang’s Semiconductor and Power Device Patents.

Introduction

Injun Hwang is an inventor based in Suwon-si, South Korea. His patent work includes semiconductor device structures and power-device cooling designs. Hwang is associated with Samsung Electronics, and the supplied information lists 2 patents.

Latest Patents

One patent, “Semiconductor Device Sidewall of the Gate Semiconductor Layer Including a Plurality of Surfaces Having Different Slopes,” describes a device with a channel layer, barrier layer, gate electrode, and gate semiconductor layer. The gate semiconductor layer has a narrower surface at the gate electrode than at the barrier layer, with multiple sidewall surfaces of different slopes.

Another patent, “Power Device and Method of Manufacturing the Same,” describes a compound-semiconductor power device with a gate, source, drain, and passivation layer. It also features a cooling-space region formed within the substrate, with an enlarged section that creates a cooling path.

Career Highlights

Hwang’s listed inventions address device architecture and thermal management. The first focuses on the geometry of a gate semiconductor layer, while the second introduces a substrate cooling path for a power device.

Collaborations

The supplied information identifies Joonyong Kim and Sunkyu Hwang as Hwang’s coworkers. It does not specify whether they collaborated on either of the listed patents.

Conclusion

Injun Hwang’s patent portfolio, as described here, reflects work on semiconductor structures and cooling solutions for power devices at Samsung Electronics.