San Jose, CA, United States of America

Ingming Chang


Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2009-2011

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2 patents (USPTO):Explore Patents

Title: Ingming Chang: Innovator in Memory Device Technology

Introduction

Ingming Chang is a notable inventor based in San Jose, California, recognized for his contributions to memory device technology. With a total of two patents to his name, he has made significant advancements in the field of memory architecture.

Latest Patents

Ingming Chang's latest patents include innovative methods for enhancing memory devices. The first patent, titled "Converting SRAM cells to ROM cells," discloses a method for converting static random access memory cells into read-only memory cells. This process involves a specific configuration of transistors and voltage supply lines, allowing for a predetermined output value when powered. The second patent, "Degeneration technique for designing memory devices," outlines a flexible approach to producing instances of memory devices from a banked memory architecture. This method allows for fine granularity in the number of rows provided, making it particularly suitable for highly banked memory architectures.

Career Highlights

Ingming Chang is currently employed at Arm Limited, where he continues to develop innovative solutions in memory technology. His work has contributed to the advancement of memory devices, enhancing their efficiency and functionality.

Collaborations

Throughout his career, Ingming has collaborated with talented individuals such as Karl Lin Wang and Hemangi Umakant Gajjewar, further enriching his contributions to the field.

Conclusion

Ingming Chang's innovative work in memory device technology showcases his expertise and commitment to advancing the industry. His patents reflect a deep understanding of memory architecture, positioning him as a key figure in this technological domain.

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