Icheon-si, South Korea

In Soo Lee

USPTO Granted Patents = 7 

Average Co-Inventor Count = 1.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Icheon-si, KR (2016 - 2020)
  • Seoul, KR (2021)

Company Filing History:


Years Active: 2016-2025

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7 patents (USPTO):Explore Patents

Title: In Soo Lee: Innovator in Memory Technology

Introduction

In Soo Lee is a prominent inventor based in Icheon-si, South Korea. He has made significant contributions to the field of memory technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

In Soo Lee's latest patents include an impedance calibration circuit, a memory controller that incorporates this circuit, and a memory system utilizing the memory controller. The impedance calibration circuit is designed to perform operations that generate calibration code sets for adjusting the impedance of terminating resistors. This ensures optimal performance by referencing external resistors. Additionally, his nonvolatile memory apparatus features multiple cell arrays, each with near and far areas, allowing for efficient memory cell selection and read operations based on address signals.

Career Highlights

In Soo Lee is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced memory technologies. His contributions have not only advanced the field but have also enhanced the capabilities of memory systems used in various applications.

Collaborations

In his career, In Soo Lee has collaborated with notable colleagues, including Jung Hyuk Yoon and Chang Yong Ahn. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

In Soo Lee's contributions to memory technology through his patents and work at SK Hynix Inc. highlight his role as a leading inventor in the field. His innovative solutions continue to shape the future of memory systems.

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