Suwon, South Korea

In-Hack Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: In-Hack Lee. Retrieved from https://idiyas.com/inventor/in-hack-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: In-Hack Lee: Innovator in Semiconductor Technology

Introduction

In-Hack Lee is a prominent inventor based in Suwon, South Korea. He is known for his contributions to semiconductor technology, particularly in the development of devices that enhance operational efficiency and stability.

Latest Patents

In-Hack Lee holds 1 patent for a semiconductor device and method of manufacturing the same. This innovative semiconductor device is designed to operate at a high and stable voltage. The device includes a substrate with an active region that features a channel region, a gate insulating layer, and a gate electrode. Additionally, it incorporates buried insulating patterns within the channel region and a pair of source/drain regions that enhance its functionality.

Career Highlights

Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has significantly contributed to advancements in the field, making him a valuable asset to the company.

Collaborations

Throughout his career, In-Hack Lee has collaborated with notable colleagues, including Jae-hyun Yoo and Seong-Hun Jang. These partnerships have fostered innovation and have led to the successful development of cutting-edge technologies.

Conclusion

In-Hack Lee's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence the development of efficient and reliable semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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