Seongnam, South Korea

Ikuo Nakamatsu

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ikuo Nakamatsu. Retrieved from https://idiyas.com/inventor/ikuo-nakamatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Ikuo Nakamatsu: Innovator in Semiconductor Design

Introduction

Ikuo Nakamatsu is a prominent inventor based in Seongnam, South Korea. He is known for his contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for designing semiconductor devices.

Latest Patents

Nakamatsu holds a patent for a "Method of designing a layout of a semiconductor device, and a semiconductor device including a fin." This patent describes a semiconductor device that features active fins on a substrate. The design includes gate lines that extend in a specific direction on the active fins, along with a contact plug positioned on the active fins. The patent outlines the precise distances and arrangements of the components to optimize the device's performance.

Career Highlights

Ikuo Nakamatsu is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor design. His work has significantly impacted the efficiency and functionality of semiconductor devices in various applications.

Collaborations

Nakamatsu has collaborated with notable colleagues, including Yun-Se Oh and Chul-hong Park. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ikuo Nakamatsu's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods and collaborative efforts at Samsung Electronics Co., Ltd. highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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