The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Oct. 26, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Seon-Ah Nam, Yongin-si, KR;
Ikuo Nakamatsu, Seongnam-si, KR;
Dong-Hyun Kim, Yongin-si, KR;
Chul-Hong Park, Seongnam-si, KR;
Yun-Se Oh, Anseong-si, KR;
Hae-Wang Lee, Yongin-si, KR;
Ho-Jun Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonngi-Do, KR;
Abstract
A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.