Petah-Tiqwa, Israel

Igor Lyubomirsky

This inventor holds 2 USPTO granted patents. Top assignee: Yeda Research and Develpment & Co. Ltd. Active years: 1995-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Igor Lyubomirsky. Retrieved from https://idiyas.com/inventor/igor-lyubomirsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Tetach-Tigwa, IL (1995)
  • Petach-Tigwa, IL (2000)

Company Filing History:


Years Active: 1995-2000

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2 patents (USPTO):Explore Patents

Title: Igor Lyubomirsky: Innovator in Semiconductor Technology

Introduction

Igor Lyubomirsky is a notable inventor based in Petach-Tikva, Israel. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design.

Latest Patents

His latest patents include a semiconductor device with stabilized junctions. This invention focuses on achieving self-stabilizing concentration profiles in solids, particularly in n- or p-type mercury cadmium telluride (MCT) and zinc mercury telluride (ZMT). The patents detail how silver can be incorporated as a doping impurity to create p-n junctions, which are essential for the stability of the concentration profiles. For specific telluride compositions, indium is identified as the n-type dopant of choice.

Career Highlights

Igor works at Yeda Research and Development Co. Ltd., where he continues to push the boundaries of semiconductor research. His work has implications for various applications in electronics and materials science.

Collaborations

He collaborates with esteemed colleagues such as Konstantin Gartsman and David Ferdinand Cahen, contributing to a dynamic research environment that fosters innovation.

Conclusion

Igor Lyubomirsky's work in semiconductor technology exemplifies the spirit of innovation. His patents reflect a deep understanding of material properties and device functionality, paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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