The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
Apr. 14, 1993
Yeda Research and Development Co., Ltd., Rehovot, IL;
Abstract
Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hg.sub.x Cd.sub.1-x Te and especially using Hg.sub.0.3 Cd.sub.0.7 Te. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrates within the MCT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For the specific telluride composition, indium is the n-type dopant of choice.