Filton, United Kingdom

Ian Sturland

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Snap Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ian Sturland. Retrieved from https://idiyas.com/inventor/ian-sturland

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Ian Sturland: Innovator in Surface Relief Structures

Introduction

Ian Sturland is a notable inventor based in Filton, GB. He has made significant contributions to the field of surface relief structures, showcasing his innovative spirit and technical expertise. His work has led to advancements in etching technology, which are crucial for various applications.

Latest Patents

Ian Sturland holds 1 patent for his invention titled "Manufacture of surface relief structures." This patent describes a method and apparatus for etching variable depth features in a substrate. The innovative aspect of his invention lies in the movement of the substrate relative to an etchant during the etching process. This technique allows for a varying etch time, resulting in different depths across the substrate without the need for a varying mask.

Career Highlights

Ian is currently employed at Snap Inc., where he continues to develop and refine his innovative ideas. His work at Snap Inc. has positioned him at the forefront of technological advancements in the industry.

Collaborations

Ian collaborates with talented individuals such as Mark Venables and Tracey Hawke, contributing to a dynamic and innovative work environment.

Conclusion

Ian Sturland's contributions to the field of surface relief structures exemplify his dedication to innovation and technology. His patent and work at Snap Inc. highlight his role as a key player in advancing etching methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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