San Diego, CA, United States of America

Ian Huang

This inventor holds 1 USPTO granted patent. Top assignee: Qualcomm Incorporated. Active years: 2006.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Ian Huang - Innovator in Memory Access Technology

Introduction

Ian Huang is a prominent inventor based in San Diego, CA. He has made significant contributions to the field of memory access technology, particularly in enhancing the reliability and speed of memory devices. His innovative approach has led to the development of techniques that improve the performance of NAND Flash memory.

Latest Patents

Ian Huang holds a patent for "Robust and high-speed memory access with adaptive interface timing." This patent describes techniques for quickly and reliably accessing a memory device, such as NAND Flash memory, using adaptive interface timing. The method involves accessing the memory at an initial rate predicted to ensure reliable access. Error correction coding (ECC) is employed to verify the integrity of the data read from the memory. If errors are detected, the system adjusts to a slower access rate to ensure accurate data retrieval.

Career Highlights

Ian Huang is currently employed at Qualcomm Incorporated, a leading technology company known for its innovations in telecommunications and semiconductor technology. His work at Qualcomm has allowed him to focus on advancing memory access technologies, contributing to the company's reputation for cutting-edge solutions.

Collaborations

Ian has collaborated with notable colleagues, including Dexter Tamio Chun and Ajit B Patil. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Ian Huang's contributions to memory access technology exemplify the spirit of innovation in the tech industry. His patent and work at Qualcomm highlight his commitment to improving the reliability and speed of memory devices. His efforts continue to shape the future of memory technology.

Profile summary based on public USPTO records.
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