The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Nov. 18, 2004
Dexter Tamio Chun, San Diego, CA (US);
Ajit Patil, San Diego, CA (US);
Ian Huang, San Diego, CA (US);
Jason Chan, San Diego, CA (US);
Timothy Gold, Ramona, CA (US);
Dexter Tamio Chun, San Diego, CA (US);
Ajit Patil, San Diego, CA (US);
Ian Huang, San Diego, CA (US);
Jason Chan, San Diego, CA (US);
Timothy Gold, Ramona, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Techniques for quickly and reliably accessing a memory device (e.g., a NAND Flash memory) with adaptive interface timing are described. For memory access with adaptive interface timing, the NAND Flash memory is accessed at an initial memory access rate, which may be the rate predicted to achieve reliable memory access. Error correction coding (ECC), which is often employed for NAND Flash memory, is then used to ensure reliable access of the NAND Flash. For a read operation, one page of data is read at a time from the NAND Flash memory, and the ECC determines whether the page read from the NAND Flash memory contains any errors. If errors are encountered, then a slower memory access rate is selected, and the page with error is read again from the NAND Flash memory at the new rate. The techniques may be used to write data to the NAND Flash memory.