I-Hung Li

Title: Innovations by I-Hung Li in Semiconductor Technology

Introduction

I-Hung Li is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of interconnect structures. His innovative work has led to the development of a patent that addresses critical challenges in semiconductor device fabrication.

Latest Patents

I-Hung Li holds a patent for a semiconductor device interconnect and methods of formation. This patent describes a first interconnect structure, such as a gate interconnect, which is etched and filled. The process involves etching back the first interconnect structure to remove a portion, followed by filling a second interconnect structure and the remaining part of the first interconnect structure. This method ensures that the height of the remaining portion of the first interconnect structure is closer to that of the second interconnect structure, thereby reducing the likelihood of void formation during the filling process.

Career Highlights

I-Hung Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to apply his innovative ideas and contribute to advancements in semiconductor technology.

Collaborations

I-Hung Li collaborates with talented coworkers, including Te-Chih Hsiung and Yi-Ruei Jhan. Their combined expertise fosters a productive environment for innovation and development in semiconductor technologies.

Conclusion

I-Hung Li's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor device fabrication.