The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
May. 18, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Te-Chih Hsiung, Taipei, TW;
I-Hung Li, New Taipei, TW;
Yi-Ruei Jhan, Hsinchu, TW;
Yuan-Tien Tu, Puzih, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A first interconnect structure (e.g., a gate interconnect) of a butted contact (BCT) is etched and filled. The first interconnect structure is then etched back such that a portion of the first interconnect structure is removed, then a second interconnect structure and the remaining portion of the first interconnect structure are filled. In this way, the height of the remaining portion of the first interconnect structure that is to be filled is closer to the height of the second interconnect structure when the second interconnect structure is filled relative to fully filling the second interconnect structure and fully filling the first interconnect structure in a single deposition operation. This reduces the likelihood that filling the second interconnect structure will close the first interconnect structure before the first interconnect structure can be fully filled, which may otherwise result in the formation of a void in the first interconnect structure.