Richardson, TX, United States of America

I-Fay F Wang

This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1986-1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: I-Fay F Wang. Retrieved from https://idiyas.com/inventor/i-fay-f-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 2

Forward Citations = 101(Granted Patents)


Company Filing History:


Years Active: 1986-1989

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2 patents (USPTO):Explore Patents

Title: Innovations of I-Fay F Wang

Introduction

I-Fay F Wang is a notable inventor based in Richardson, TX (US). He has made significant contributions to the field of electronics, particularly in the development of innovative technologies. With a total of 2 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is the "CMOS substrate charge pump voltage regulator." This invention features a substrate bias voltage regulator that includes a voltage divider for generating a reference voltage. It also incorporates a low gain stage that develops a drive voltage independent of the supply voltage and drives a current source/mirror circuit. This current source/mirror circuit operates alongside a current sink circuit to provide a logic output for controlling a substrate charge pump circuit. Additionally, a compensation circuit is connected to the current sink circuit to adjust the drive in response to transistor threshold voltage and temperature considerations.

Another significant patent is for a "Memory with redundancy." This invention describes a byte-wide memory with column redundancy, allowing redundant columns to substitute for any defective column in the half-array. Fuses store the address information of defective columns, and when a match is found between the externally received column address and the stored defective-column address, the sense amplifier for that bit position is disabled. This innovative configuration allows for efficient substitution of defective columns without the need for one redundant column for every bit position.

Career Highlights

I-Fay F Wang is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to further develop his innovative ideas and contribute to cutting-edge technology.

Collaborations

Some of his notable coworkers include Ashwin H Shah and James D Gallia. Their collaboration has likely fostered an environment of creativity and innovation, leading to advancements in their respective fields.

Conclusion

I-Fay F Wang's contributions to the field of electronics through his patents and work at Texas Instruments Corporation highlight his role as a significant inventor. His innovative solutions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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