Company Filing History:
Years Active: 2015
Title: I-Fang Huang: Innovator in Semiconductor Fabrication
Introduction
I-Fang Huang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to device fabrication.
Latest Patents
His latest patents include a "Method of fabricating a MOS device using a stress-generating material." This patent outlines a detailed process for creating a MOS device, which involves forming a gate structure on a substrate, implanting source and drain extension regions, and applying stress from a spacer material layer to enhance device performance. Another notable patent is the "Method for fabricating semiconductor device," which describes a comprehensive method for creating semiconductor devices with multiple gate structures and spacers, utilizing etching processes and ion implantation techniques.
Career Highlights
I-Fang Huang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work focuses on advancing fabrication techniques that improve the efficiency and performance of semiconductor devices.
Collaborations
He collaborates with talented colleagues, including Tung-Ming Chen and Yu-Chun Huang, to drive innovation in semiconductor technology.
Conclusion
I-Fang Huang's contributions to semiconductor fabrication highlight his expertise and commitment to advancing technology in this critical field. His patents reflect a deep understanding of the complexities involved in device manufacturing, positioning him as a key figure in the industry.