I-Cheng Chang

Title: I-Cheng Chang: Innovator in Semiconductor Technology

Introduction

I-Cheng Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the performance and reliability of thin film transistors.

Latest Patents

One of I-Cheng Chang's latest patents is for a transistor that includes a hydrogen-diffusion barrier and methods for forming the same. This innovative thin film transistor features a gate electrode embedded in an insulating layer that overlies a substrate. It also includes a gate dielectric overlying the gate electrode, an active layer made of compound semiconductor material, and source and drain electrodes that contact the end portions of the active layer. The design incorporates thicker portions of the gate dielectric over interfaces with the insulating layer to suppress hydrogen diffusion. Additionally, a passivation capping dielectric made of dielectric metal oxide material may be interposed between the active layer and a dielectric layer above it to further mitigate hydrogen diffusion.

Career Highlights

I-Cheng Chang has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and the Industrial Technology Research Institute. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, I-Cheng Chang has collaborated with esteemed colleagues such as Min-Kun Dai and Cheng-Yi Wu. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

I-Cheng Chang is a key figure in the semiconductor industry, known for his innovative patents and contributions to thin film transistor technology. His work continues to influence the field and drive advancements in semiconductor applications.