This inventor holds 1 USPTO granted patent and 5 published patent applications and 1 EPO patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Hyungyung Kim - Innovator in Memory Device Technology
Introduction
Hyungyung Kim is an inventor based in Suwon-si, South Korea. He is known for his work in the field of memory devices, particularly focusing on vertical structure memory technologies. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
Hyungyung Kim has submitted several notable patent applications. One of his latest applications is for a **VERTICAL STRUCTURE MEMORY DEVICE**. This device includes a cell string with a channel layer that extends perpendicularly to a substrate. It features a charge trap layer made of nitride doped with scandium (Sc), with a doping content ranging from 2 atomic percent (at %) to 10 at % of the total composition.
Another significant application is for a **VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME**. This application describes a vertical NAND flash memory device that consists of multiple cell arrays. Each array includes a channel layer and an amorphous charge trap layer containing aluminum oxide and an oxide of an element X, which may include Hf, Zr, La, Y, Ta, or Ga.
Conclusion
Hyungyung Kim is an emerging inventor in the field of memory device technology, with promising applications that could shape the future of data storage solutions. His innovative approaches highlight the potential for advancements in vertical memory structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile