Seongnam-si, South Korea

Hyunglae Eun

USPTO Granted Patents = 6 

 

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2021-2022

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6 patents (USPTO):Explore Patents

Title: Hyunglae Eun: Innovator in Memory Technology

Introduction

Hyunglae Eun is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of memory technology, holding a total of 6 patents. His work primarily focuses on memory controllers and storage devices, which are crucial for enhancing data storage efficiency and reliability.

Latest Patents

Hyunglae Eun's latest patents include innovative designs for memory controllers and storage devices. One notable patent describes a storage device that integrates both non-volatile and volatile memory. This device features a memory controller that manages these memory types and is capable of executing repair operations when defects are detected. Another patent outlines a method for controlling the repair of volatile memory devices, which involves setting specific test conditions to identify and rectify errors in data storage.

Career Highlights

Hyunglae Eun has built a successful career at Samsung Electronics Co., Ltd., where he has been instrumental in advancing memory technology. His expertise in developing efficient memory solutions has positioned him as a key player in the industry. His innovative approaches have not only improved product performance but have also contributed to the overall advancement of storage technology.

Collaborations

Throughout his career, Hyunglae Eun has collaborated with talented individuals such as Dong Won Kim and Inhoon Park. These collaborations have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Hyunglae Eun's contributions to memory technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the field. His innovative solutions continue to shape the future of data storage and memory management.

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