Seongnam, South Korea

Hyungjoo Na

This inventor holds 1 USPTO granted patent. Top assignee: Yonsei University. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyungjoo Na. Retrieved from https://idiyas.com/inventor/hyungjoo-na-jpwpznug

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Hyungjoo Na: Innovator in Metal Oxide Nanowires

Introduction: Hyungjoo Na is a prominent inventor based in Seongnam, South Korea. He has made significant contributions to the field of nanotechnology, particularly in the growth of metal oxide nanowires. His innovative methods have the potential to advance various applications in electronics and materials science.

Latest Patents: Hyungjoo Na holds a patent titled "Method for implanted-ion assisted growth of metal oxide nanowires and patterned device fabricated using the method." This patent describes a method for growing metal oxide nanowires through ion implantation. The process involves depositing a metal oxide thin film on a substrate, implanting ions into the film, and subsequently heating the ion-implanted film to facilitate the growth of nanowires. He has 1 patent to his name.

Career Highlights: Hyungjoo Na is affiliated with Yonsei University, where he conducts research and develops innovative technologies. His work has garnered attention in the academic community, contributing to advancements in nanotechnology.

Collaborations: He has collaborated with notable colleagues, including Jungwook Choi and Jaesam Sim, to further enhance the research and development of nanowire technologies.

Conclusion: Hyungjoo Na's contributions to the field of nanotechnology, particularly through his patented methods for growing metal oxide nanowires, highlight his role as an influential inventor. His work continues to inspire advancements in various technological applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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