The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Dec. 16, 2014
Applicant:
Industry-academic Cooperation Foundation Yonsei University, Seoul, KR;
Inventors:
Jongbaeg Kim, Goyang-si, KR;
Hyungjoo Na, Seongnam-si, KR;
Dae-Hyun Baek, Seoul, KR;
Kyoung Hoon Lee, Seoul, KR;
Jungwook Choi, Seoul, KR;
Jaesam Sim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/48 (2006.01); C23C 14/04 (2006.01); C23C 28/04 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); C23C 14/08 (2013.01); C23C 14/5806 (2013.01); C23C 14/5833 (2013.01); Y10T 428/24802 (2015.01);
Abstract
An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires.