Daegu, South Korea

Hyung-Jun Kim

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyung-Jun Kim. Retrieved from https://idiyas.com/inventor/hyung-jun-kim-pnx3rc6z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Hyung-Jun Kim: Innovator in Spin Transistor Technology

Introduction

Hyung-Jun Kim is a prominent inventor based in Daegu, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on spin transistors. His research and inventions have the potential to advance the capabilities of electronic devices.

Latest Patents

Hyung-Jun Kim holds a patent for a spin transistor utilizing ferromagnet technology. This invention comprises a semiconductor substrate part that includes a lower cladding layer, a channel layer, and an upper cladding layer stacked sequentially. The design features a ferromagnetic source and drain positioned on the substrate part, along with a gate that controls the spins of electrons passing through the channel layer. The lower cladding layer consists of a first and a second layer, with the latter having a higher band gap. Similarly, the upper cladding layer is made up of two layers, with the second layer also having a higher band gap. The source and drain are integrated into the upper surface of the substrate and extend downward to or beneath the first upper cladding layer. This innovative design enhances the functionality of spin transistors in electronic applications.

Career Highlights

Hyung-Jun Kim is affiliated with the Korea Institute of Science and Technology, where he conducts research and development in advanced semiconductor technologies. His work has garnered attention for its potential applications in next-generation electronic devices.

Collaborations

Hyung-Jun Kim collaborates with notable colleagues, including Hyun-Cheol Koo and Suk-Hee Han. Their combined expertise contributes to the advancement of research in semiconductor technology.

Conclusion

Hyung-Jun Kim's contributions to the field of spin transistors exemplify the innovative spirit of modern inventors. His work not only enhances our understanding of semiconductor technology but also paves the way for future advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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