The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Oct. 30, 2006
Hyun-cheol Koo, Seoul, KR;
Suk-hee Han, Seoul, KR;
Jong-hwa Eom, Seoul, KR;
Joon-yeon Chang, Seoul, KR;
Hyung-jun Kim, Daeku, KR;
Hyun-jung Yi, Seoul, KR;
Hyun-Cheol Koo, Seoul, KR;
Suk-Hee Han, Seoul, KR;
Jong-Hwa Eom, Seoul, KR;
Joon-Yeon Chang, Seoul, KR;
Hyung-Jun Kim, Daeku, KR;
Hyun-Jung Yi, Seoul, KR;
Abstract
A spin transistor comprises a semiconductor substrate part having a lower cladding layer, a channel layer and an upper cladding layer sequentially stacked therein, a ferromagnetic source and drain on the substrate part, and a gate on the substrate part to control spins of electrons passing through the channel layer. The lower cladding layer comprises a first lower cladding layer and a second lower cladding layer having a higher band gap than that of the first lower cladding layer. The upper cladding layer comprises a first upper cladding layer and a second upper cladding layer having a higher band gap than that of the first upper cladding layer. The source and the drain are buried in an upper surface of the substrate part and extend downwardly to or under the first upper cladding layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile