Seoul, South Korea

Hyun-Jung Yi

This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Korea Institute of Science and Technology. Active years: 2009-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-Jung Yi. Retrieved from https://idiyas.com/inventor/hyun-jung-yi-a8vx01x4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2009-2010

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2 patents (USPTO):Explore Patents

Title: Hyun-Jung Yi: Innovator in Spintronics

Introduction

Hyun-Jung Yi is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of spintronics, focusing on the development of advanced semiconductor devices. With a total of 2 patents, his work is paving the way for innovative technologies in electronics.

Latest Patents

One of his latest patents is a spin transistor using ferromagnet. This invention comprises a semiconductor substrate part with a lower cladding layer, a channel layer, and an upper cladding layer stacked sequentially. It features a ferromagnetic source and drain on the substrate part, along with a gate that controls the spins of electrons passing through the channel layer. The design includes a lower cladding layer with two components, each having different band gaps, and an upper cladding layer with a similar structure. The source and drain are embedded in the upper surface of the substrate and extend downwardly to or under the first upper cladding layer.

Another notable patent is the current induced magnetoresistance device. This device consists of a magnetic multilayer made up of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer. The first ferromagnetic layer is equipped with an upper electrode, while the second ferromagnetic layer is pinned by an antiferromagnet that contains a lower electrode. The design aims to provide a lower critical current for magnetization reversal while increasing resistance.

Career Highlights

Hyun-Jung Yi is affiliated with the Korea Institute of Science and Technology, where he conducts research and development in advanced materials and devices. His work has garnered attention for its potential applications in next-generation electronic systems.

Collaborations

He collaborates with notable colleagues, including Suk-Hee Han and Jong-Hwa Eom, who contribute to his research endeavors.

Conclusion

Hyun-Jung Yi's innovative work in spintronics and semiconductor technology highlights his role as a leading inventor in the field. His patents reflect a commitment to advancing electronic devices, which may have significant implications for future technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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