Suwon, South Korea

Hyun-sug Han

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-sug Han. Retrieved from https://idiyas.com/inventor/hyun-sug-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hyun-sug Han

Introduction

Hyun-sug Han is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of nonvolatile memory devices. His work has implications for the advancement of semiconductor technology.

Latest Patents

Hyun-sug Han holds a patent for "Nonvolatile memory devices and methods of fabricating the same." This innovative patent describes a nonvolatile memory device that includes a semiconductor substrate and a floating gate electrode with an acute-angled tip. The design features a control gate electrode that is insulated from the floating gate electrode, enhancing the device's functionality.

Career Highlights

Han is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory device innovation. With 1 patent to his name, he continues to contribute to advancements in semiconductor technology.

Collaborations

Some of his notable coworkers include Jung-sup Uom and Sup-youl Ju. Their collaboration has likely fostered an environment of innovation and creativity within their projects.

Conclusion

Hyun-sug Han's contributions to nonvolatile memory technology exemplify the importance of innovation in the semiconductor industry. His work continues to influence advancements in memory devices, showcasing the impact of dedicated inventors in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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