The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Dec. 07, 2006
Bong-gil Yang, Suwon-si, KR;
Jung-sup Uom, Suwon-si, KR;
Sup-youl Ju, Seongnam-si, KR;
Se-jong Park, Seoul, KR;
Hyun-sug Han, Suwon-si, KR;
Bong-gil Yang, Suwon-si, KR;
Jung-sup Uom, Suwon-si, KR;
Sup-youl Ju, Seongnam-si, KR;
Se-jong Park, Seoul, KR;
Hyun-sug Han, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device may include a semiconductor substrate, a floating gate electrode on the semiconductor substrate that includes an acute-angled tip at an upper end, and a control gate electrode insulated from the floating gate electrode and facing at least a portion of the floating gate electrode, wherein an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode is smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile