Hwaseong, South Korea

Hyun Su Jun

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun Su Jun. Retrieved from https://idiyas.com/inventor/hyun-su-jun-4ws64k63

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Hyun Su Jun: Innovator in Plasma Technology

Introduction

Hyun Su Jun is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of plasma technology, particularly through his innovative patent related to plasma equipment.

Latest Patents

Hyun Su Jun holds a patent for "Plasma equipment and methods of using the same." This invention includes a chamber where a plasma reaction occurs, a detector that outputs a spectrum signal in response to light generated from the plasma reaction, and a plasma monitoring module that determines whether the spectrum signal includes an arcing signal or a hunting signal. This technology enhances the efficiency and reliability of plasma equipment.

Career Highlights

Hyun Su Jun is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of technological advancements in plasma applications.

Collaborations

He collaborates with talented coworkers, including YongKyu Kim and DooByeong Park, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Hyun Su Jun's contributions to plasma technology through his patent and work at Samsung Electronics highlight his role as a key innovator in the field. His advancements continue to influence the development of plasma equipment and methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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