Hwaseong, South Korea

Hyun-Sil Hong

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-Sil Hong. Retrieved from https://idiyas.com/inventor/hyun-sil-hong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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4 patents (USPTO):Explore Patents

Title: Hyun-Sil Hong: Innovator in Semiconductor Technology

Introduction

Hyun-Sil Hong is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of his latest patents is a method of fabricating a semiconductor device that includes a porous dielectric layer. This method involves sequentially stacking an interlayer insulating layer, a porous dielectric layer, a first mask layer, and a second mask layer on a substrate. The process includes etching the second mask layer to form preliminary mask patterns, followed by etching these patterns to create second mask patterns. The first mask layer is then etched using the second mask patterns as an etch mask to form first mask patterns, and the porous dielectric layer is etched using the first mask patterns to create grooves. Finally, interconnection patterns are formed in these grooves, with the porous dielectric layer comprising SiOCH and the first mask layer made of carbon-free silicon oxide (SiO).

Another notable patent involves a semiconductor device that includes a device isolation layer with multiple patterns. This device features a substrate with inner surfaces defining trenches that create an active pattern. The trenches consist of a first trench and a second trench with different widths. The device isolation layer partially fills these trenches and includes various isolation patterns. A word line intersects the active pattern, with the top surface of the second isolation pattern positioned higher than that of the filling pattern.

Career Highlights

Hyun-Sil Hong is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to advancements in electronic devices.

Collaborations

Throughout his career, Hyun-Sil has collaborated with notable colleagues, including Hyunchul Lee and Ki-Jeong Kim. These collaborations have further enhanced his research and development efforts in the semiconductor field.

Conclusion

Hyun-Sil Hong is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His innovative patents and contributions to Samsung Electronics Co., Ltd. highlight his expertise and commitment to pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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