Hyun Sik Noh

Title: Innovations of Hyun Sik Noh

Introduction

Hyun Sik Noh is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of thin film technology, holding a total of 2 patents. His work focuses on advanced methods for etching and forming thin films, which are crucial in various technological applications.

Latest Patents

One of his latest patents is an atomic layer etching method using a ligand exchange reaction. This method involves several steps, including placing a substrate with a thin film into a reaction chamber, forming a halogenated thin film on the substrate, and etching the halogenated thin film by infusing a ligand without a metal or metal precursor. Another significant patent is a method of forming a thin film using a surface protection material. This method includes supplying a surface protection material to a chamber, discharging unadsorbed material, and then supplying a metal precursor to form the thin film.

Career Highlights

Hyun Sik Noh has worked with prominent companies such as SK Hynix Inc. and Merck Patent GmbH. His experience in these organizations has allowed him to develop and refine his innovative techniques in thin film technology.

Collaborations

He has collaborated with notable coworkers, including Eun Ae Jung and Jae Chul Lee, contributing to advancements in their respective fields.

Conclusion

Hyun Sik Noh's contributions to thin film technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative methods continue to impact technological advancements significantly.