The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jan. 17, 2023
SK Hynix Inc., Icheon-si, KR;
Merck Patent Gmbh, Darmstadt, DE;
Jae Chul Lee, Icheon-si, KR;
Hyun Sik Noh, Icheon-si, KR;
Dong Kyun Lee, Icheon-si, KR;
Eun Ae Jung, Icheon-si, KR;
Kyoung-Mun Kim, Daejeon, KR;
Jooyong Kim, Siheung-si, KR;
Younghun Byun, Jeungpyeong-gun, KR;
Byeong Il Yang, Daejeon, KR;
Changhyun Jin, Incheon, KR;
SK hynix Inc., Icheon, KR;
Merck Patent GmbH, Darmstadt, DE;
Abstract
An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.