Incheon, South Korea

Hyun-Seung Shin


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hyun-Seung Shin

Introduction

Hyun-Seung Shin is a notable inventor based in Incheon, South Korea. He has made significant contributions to the field of microscopy, particularly with his innovative designs that enhance the capabilities of scanning probe microscopes. His work is characterized by a focus on precision and the ability to analyze complex sample structures.

Latest Patents

Hyun-Seung Shin holds a patent for a "Scanning probe microscope capable of measuring samples having overhang structure." This invention provides a scanning probe microscope that can precisely analyze the characteristics of samples with overhang surface structures. The design includes a first probe and a first scanner that changes the position of the probe along a straight line, along with a second scanner that adjusts the position of the sample in a plane. Notably, the straight line in which the first probe's position is altered is non-perpendicular to the plane of the sample's movement, allowing for enhanced measurement capabilities.

Career Highlights

Hyun-Seung Shin is associated with Park Systems Corporation, a company known for its advancements in atomic force microscopy and related technologies. His role at the company has allowed him to contribute to cutting-edge research and development in the field of microscopy.

Collaborations

Some of his notable coworkers include Sang-il Park and Yong-Seok Kim. Their collaboration has likely fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Hyun-Seung Shin's contributions to the field of microscopy through his innovative patent demonstrate his commitment to advancing technology. His work not only enhances the capabilities of scientific instruments but also paves the way for future innovations in the field.

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