Hyun Mo Kang

Title: Hyun Mo Kang: Innovator in Data Storage and Thin Film Transistors

Introduction

Hyun Mo Kang is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the fields of data storage devices and thin film transistors. With a total of 2 patents, his work showcases innovative approaches to technology.

Latest Patents

One of his latest patents is a data storage device that includes a storage medium, a first buffer memory, a second buffer memory, and a controller. The controller is designed to manage data input and output for the storage medium based on requests from a host device. It also stores write data in the first and second buffer memories in response to write requests from the host device. Another significant patent involves a method for crystallizing amorphous silicon thin films and fabricating polycrystalline thin film transistors. This method allows for the production of polycrystalline thin film transistors with leakage current characteristics suitable for active matrix organic light-emitting diode displays (AMOLEDs). The process includes forming an amorphous silicon layer on a substrate and utilizing a silicide seed induced lateral crystallization (SILC) method.

Career Highlights

Hyun Mo Kang has worked with Skhynix Inc., a leading company in the semiconductor industry. His experience in this company has contributed to his expertise in data storage technologies and thin film transistors.

Collaborations

Some of his notable coworkers include Hyung Min Kim and Do Hun Kim. Their collaboration has likely fostered innovation and development in their respective fields.

Conclusion

Hyun Mo Kang's contributions to technology through his patents and career experiences highlight his role as an influential inventor. His work continues to impact the fields of data storage and thin film transistors.