Hyun-deok Yang

Title: Hyun-deok Yang: Innovator in Semiconductor Technology

Introduction

Hyun-deok Yang is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for enhancing semiconductor devices, particularly through the use of advanced materials and fabrication techniques.

Latest Patents

One of Hyun-deok Yang's latest patents involves a germanium silicide layer that includes vanadium, platinum, and nickel. This invention relates to a method of forming a germanium (Ge) silicide layer, which is crucial for semiconductor devices. The method includes forming a metal layer with vanadium on a silicon germanium (SiGe) layer, which may have a multiple-layer structure. The annealing process, performed using a laser spike annealing (LSA) method, is essential for creating the germanium silicide layer.

Another notable patent focuses on methods for fabricating non-volatile memory devices that incorporate a carbon nanotube layer and a passivation layer. This invention describes a structure that includes a switching device and a storage node, which is electrically connected to the switching device. The storage node consists of multiple layers, including metal and insulating layers, culminating in a carbon nanotube layer and a passivation layer.

Career Highlights

Hyun-deok Yang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the development of cutting-edge devices.

Collaborations

Throughout his career, Hyun-deok Yang has collaborated with notable colleagues, including Chang-Wook Moon and Joong S Jeon. These collaborations have fostered innovation and have been instrumental in advancing their shared goals in semiconductor research.

Conclusion

Hyun-deok Yang's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements in germanium silicide layers and non-volatile memory devices demonstrate his commitment to pushing technological boundaries.