The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Apr. 04, 2008
Chang-wook Moon, Seoul, KR;
Hyun-deok Yang, Yongin-si, KR;
Joong S. Jeon, Seongnam-si, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Nae-in Lee, Seoul, KR;
Weiwei Chen, Yongin-si, KR;
Chang-wook Moon, Seoul, KR;
Hyun-deok Yang, Yongin-si, KR;
Joong S. Jeon, Seongnam-si, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Nae-in Lee, Seoul, KR;
Weiwei Chen, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.