Samsung Electronics Co., Ltd.

Hyun-deok Yang

Chang-Wook Moon

Joong S Jeon

Nae-in Lee

Hwa-Sung Rhee

El Mostafa Bourim

Weiwei Chen

Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.

Germanium silicide layer including vanadium, platinum, and nickel

Nonvolatile memory devices may be fabricated to include a switching device on a substrate and/or a storage node electrically connected to the switching device. A storage node may include a lower metal layer electrically connected to the switching device, a first insulating layer, a middle metal layer, a second insulating layer, an upper metal layer, a carbon nanotube layer, and/or a passivation layer stacked on the lower metal layer.

Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer

Example embodiments may provide nonvolatile memory devices and example methods of fabricating nonvolatile memory devices. Example embodiment nonvolatile memory devices may include a switching device on a substrate and/or a storage node electrically connected to the switching device. A storage node may include a lower metal layer electrically connected to the switching device, a first insulating layer, a middle metal layer, a second insulating layer, an upper metal layer, a carbon nanotube layer, and/or a passivation layer stacked on the lower metal layer.

Nonvolatile memory devices and methods of fabricating the same

Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device

Growing community of inventors

Yongin-si, South Korea

Hyun-deok Yang