This inventor holds 1 USPTO granted patent. Top assignee: Fairchild Korea Semiconductor Ltd.. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2003
Title: Hyun-chul Kim: Innovator in Power Semiconductor Technology
Introduction
Hyun-chul Kim is a prominent inventor based in Shihung, South Korea. He has made significant contributions to the field of power semiconductor devices, showcasing his expertise through innovative patents.
Latest Patents
One of his notable patents is titled "Trench-gate power semiconductor device preventing latch-up and method for fabricating the same." This invention provides a trench-gate power semiconductor device that includes a semiconductor substrate of a first conductivity type used as a collector region. It features a buffer layer of a second conductivity type formed on the semiconductor substrate, along with a drift region of the same second conductivity type. The device also incorporates a base region of a first conductivity type, a gate dielectric layer, and a gate electrode. The design aims to prevent latch-up, enhancing the reliability and efficiency of power semiconductor applications. Hyun-chul Kim holds 1 patent for this innovative technology.
Career Highlights
Hyun-chul Kim is currently employed at Fairchild Korea Semiconductor Ltd., where he continues to develop cutting-edge semiconductor technologies. His work has positioned him as a key player in the semiconductor industry, contributing to advancements that benefit various electronic applications.
Collaborations
Throughout his career, Hyun-chul Kim has collaborated with talented colleagues, including Chong-man Yun and Kyu-hyun Lee. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.
Conclusion
Hyun-chul Kim's contributions to the field of power semiconductor devices exemplify his dedication to innovation and technology. His patent on trench-gate power semiconductor devices highlights his role as a leading inventor in this critical area of electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile