Seoul, South Korea

Hyun-cheol Choe

This inventor holds 5 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1996-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-cheol Choe. Retrieved from https://idiyas.com/inventor/hyun-cheol-choe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 4

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 1996-2001

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5 patents (USPTO):Explore Patents

Title: The Innovations of Hyun-cheol Choe

Introduction

Hyun-cheol Choe is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work primarily focuses on integrated circuit memory devices and trench isolation methods, which are crucial for the advancement of modern electronics.

Latest Patents

One of his latest patents is titled "Integrated circuit memory devices having self-aligned contact." This patent describes a method for manufacturing a semiconductor memory device where a bit line and a storage electrode of a capacitor are connected to an active area of a semiconductor substrate via a contact pad formed in a self-aligning manner. The process involves forming gate electrodes on the semiconductor substrate, which are covered with a nitride spacer. A thermal oxide layer is then created on the exposed surface of the substrate, followed by the formation of an etch stop layer. The method continues with the creation of a first interlayer dielectric film, which is patterned to form a landing pad hole that exposes the spacer and etch stop layer. Finally, the landing pad hole is filled with a conductive material to create landing pads.

Another significant patent is the "Trench isolation method for semiconductor device." This method involves forming a pad oxide film, an oxidative film, and an etching mask film on a semiconductor substrate. A trench is then created in the field region of the substrate, and an oxide film is formed at the inner wall of the trench. After filling the trench with a dielectric material, the previously formed films in the active region are removed, allowing for enhanced device performance.

Career Highlights

Hyun-cheol Choe is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced memory devices that are essential for modern computing.

Collaborations

Throughout his career, Choe has collaborated with notable colleagues, including Hyo-dong Ban and Chang-sik Choi. These collaborations have further enriched his research and development efforts, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Hyun-cheol Choe's contributions to the field of semiconductor technology are noteworthy. His innovative patents and work at Samsung Electronics Co., Ltd. highlight his role as a key figure

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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