The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Jul. 29, 1998
Applicant:
Inventors:
Soo-jin Hong, Seoul, KR;
Yu-gyun Shin, Seoul, KR;
Han-sin Lee, Yongin, KR;
Hyun-cheol Choe, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438400 ; 438434 ; 438445 ; 437 67 ; 437 69 ; 437 70 ;
Abstract
A trench isolation method is provided. In the trench isolation method, a pad oxide film, an oxidative film and an etching mask film are formed on a semiconductor substrate in sequence, and then a trench is formed in a field region of the semiconductor substrate. A oxide film is formed at the inner wall of the trench and the side walls of the oxidative film by oxidizing the semiconductor substrate. After filling the trench with a dielectric material, the pad oxide film, oxidative film and etching mask film formed in the active region are removed.