Asan, South Korea

Hyuk-Jin Cha

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hunetplus Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyuk-Jin Cha. Retrieved from https://idiyas.com/inventor/hyuk-jin-cha-g34ttwwf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations by Hyuk-Jin Cha in Light-Emitting Diode Technology.

Introduction

Hyuk-Jin Cha is a notable inventor based in Asan, South Korea. He has made significant contributions to the field of light-emitting diodes (LEDs), particularly through his innovative methods for fabricating substrates that enhance efficiency.

Latest Patents

Hyuk-Jin Cha holds a patent for a "Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode." This patent describes a method of manufacturing a substrate for a light-emitting diode that includes a convex section forming step and a crystallization step. The method significantly improves light extraction and allows for the economical formation of nano to micron-sized patterns.

Career Highlights

Cha is associated with Hunetplus Co., Ltd., where he continues to develop cutting-edge technologies in the LED sector. His work has been instrumental in advancing the efficiency and effectiveness of light-emitting diodes.

Collaborations

Some of his coworkers include Eun-Seo Choi and Heon Ju Lee, who contribute to the innovative environment at Hunetplus Co., Ltd.

Conclusion

Hyuk-Jin Cha's contributions to LED technology through his patented methods demonstrate his commitment to innovation and efficiency in the field. His work continues to influence advancements in light-emitting diode applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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