The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Apr. 17, 2013
Applicant:
Hunetplus Co., Ltd., Nonsan, KR;
Inventors:
Assignee:
HUNETPLUS CO., LTD., Nonsan, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02356 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/311 (2013.01); H01L 21/3105 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 2933/0033 (2013.01);
Abstract
Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
Cha, Hyuk-Jin. (2016). Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode (U.S. Patent No. 9246050). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9246050
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile