Gyeonggi-do, South Korea

Hyounghee Kim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyounghee Kim. Retrieved from https://idiyas.com/inventor/hyounghee-kim-nkoa4dic

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Hyounghee Kim - Innovator in Semiconductor Fabrication

Introduction

Hyounghee Kim is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of fabrication.

Latest Patents

Hyounghee Kim holds a patent for a "Method of Fabricating Semiconductor Device." This patent outlines a process that involves forming an etch-target layer on a substrate, followed by the application of a photoresist layer. The method includes a first exposure process using a photo mask to create first-irradiated patterns and a second exposure process for second-irradiated patterns. The resulting photoresist pattern is then used to etch the etch-target layer, leading to the formation of a lower structure.

Career Highlights

Hyounghee Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work focuses on advancing semiconductor technologies, which are crucial for modern electronic devices.

Collaborations

Hyounghee has collaborated with colleagues such as Kyoungmi Kim and Myung-sun Kim, contributing to various projects within the semiconductor field.

Conclusion

Hyounghee Kim's innovative approach to semiconductor fabrication exemplifies the advancements being made in technology today. His contributions are vital for the ongoing development of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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