The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
May. 14, 2014
Kyoungmi Kim, Gyeonggi-do, KR;
Myung-sun Kim, Gyeonggi-do, KR;
Jaeho Kim, Gyeonggi-do, KR;
Hyounghee Kim, Gyeonggi-do, KR;
Namuk Choi, Gyeonggi-do, KR;
Jungsik Choi, Gyeonggi-do, KR;
Kyoungmi Kim, Gyeonggi-do, KR;
Myung-Sun Kim, Gyeonggi-do, KR;
Jaeho Kim, Gyeonggi-do, KR;
Hyounghee Kim, Gyeonggi-do, KR;
Namuk Choi, Gyeonggi-do, KR;
Jungsik Choi, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device is provided. An etch-target layer is formed on a substrate. A photoresist layer is formed on the etch-target layer. A first exposure process is performed using a first photo mask to form a plurality of first-irradiated patterns in the photoresist layer. The first photo mask includes a plurality of first transmission regions. Each first transmission region has different optical transmittance. A second exposure process is performed using a second photo mask to form a plurality of second-irradiated patterns in the photoresist layer. The second photo mask includes a plurality of second transmission regions. Each second transmission region has different optical transmittance. A photoresist pattern is formed from the photoresist layer by removing the plurality of first-irradiated and second-irradiated patterns from the photoresist layer. A lower structure is formed from the etch-target layer by etching the etch-target layer using the photoresist pattern.