Suwon-si, South Korea

Hyo Jin Heo

This inventor holds 1 USPTO granted patent. Top assignees: Ajou University Industry-Academic Cooperation Foundation, Sungkyunkwan University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyo Jin Heo. Retrieved from https://idiyas.com/inventor/hyo-jin-heo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hyo Jin Heo and Plasma Coating of Nanovesicles

Introduction

Hyo Jin Heo is an inventor associated with Suwon-si, South Korea. His work includes a patent describing a plasma-based approach to modifying the surface charge of nanovesicles.

Latest Patents

Heo is associated with 1 patent: “Plasma Coating Method of Nanovesicle Surface and Plasma Jet Device for Plasma Coating of Nanovesicle Surface.” The disclosed method uses plasma to change a nanovesicle’s surface charge from negative to neutral. It draws on the interaction between a neutral object and a negatively charged object, in which electron repulsion can cause the negatively charged object to become positively charged. The disclosure presents this approach as a simple method for adjusting nanovesicle surface charge.

Career Highlights

Heo’s listed institutional affiliations include Sungkyunkwan University and Ajou University Industry-Academic Cooperation Foundation. These affiliations connect his patent work with university and industry-academic research settings.

Collaborations

Heo’s listed coworkers include Ana Sofia Pereira De Brito and Byeong Moon Kwak. The available information identifies them as professional collaborators but does not specify their roles in the patent.

Conclusion

Hyo Jin Heo’s patent focuses on using plasma to modify nanovesicle surface charge, reflecting an applied research contribution associated with his university and industry-academic affiliations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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