Seoul, South Korea

Hyeong Rak Lim

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeong Rak Lim. Retrieved from https://idiyas.com/inventor/hyeong-rak-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Hyeong Rak Lim: Innovator in Semiconductor Technology

Introduction

Hyeong Rak Lim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Hyeong Rak Lim holds a patent for a semiconductor device using inter-diffusion and a method for manufacturing the same. This patent describes a method that includes forming a sacrificial layer on a first substrate containing first and second dopant atoms. A germanium (Ge) layer is then formed on this sacrificial layer, which incorporates the first dopant atoms diffused from the substrate during the growth process. The method also includes an annealing step after the growth of the germanium layer, allowing it to include second dopant atoms.

Career Highlights

Hyeong Rak Lim is affiliated with the Korea Institute of Science and Technology, where he has been instrumental in advancing semiconductor research and development. His work has been recognized for its potential impact on the efficiency and performance of semiconductor devices.

Collaborations

Hyeong Rak Lim has collaborated with notable colleagues, including Hyung-jun Kim and Seong Kwang Kim. Their joint efforts have contributed to the advancement of semiconductor technologies.

Conclusion

Hyeong Rak Lim's innovative work in semiconductor technology exemplifies the importance of research and development in this critical field. His contributions continue to influence the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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