Incheon, South Korea

Hyeng-Woo Eom

This inventor holds 2 USPTO granted patents. Top assignee: Skhynix Inc.. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeng-Woo Eom. Retrieved from https://idiyas.com/inventor/hyeng-woo-eom-a70upeox

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Hyeng-Woo Eom: Innovator in Semiconductor Technology

Introduction

Hyeng-Woo Eom is a prominent inventor based in Incheon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

Hyeng-Woo Eom's latest patents include a method for fabricating a semiconductor device. This method involves forming a stack structure that includes a horizontal recess over a substrate. It also includes forming a blocking layer lining the horizontal recess, an interface control layer with a dielectric barrier element and a conductive barrier element over the blocking layer, and a conductive layer to fill the horizontal recess.

Career Highlights

Eom is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to develop and refine his innovative techniques in semiconductor fabrication.

Collaborations

Some of his notable coworkers include Jung-Myoung Shim and Young-Ho Yang. Their collaboration has contributed to advancements in semiconductor technology and innovation.

Conclusion

Hyeng-Woo Eom's contributions to semiconductor technology through his patents and work at SK Hynix Inc. highlight his role as a key innovator in the field. His methods for fabricating semiconductor devices are paving the way for future advancements in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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