Suwon, South Korea

Hyejeong Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyejeong Lee. Retrieved from https://idiyas.com/inventor/hyejeong-lee-ax7a6qfc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Hyejeong Lee - Innovator in Semiconductor Materials

Introduction

Hyejeong Lee is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor materials, particularly through his innovative patent.

Latest Patents

Hyejeong Lee holds a patent for a high-thermal conductive epoxy compound and composition. This invention serves as a material for semiconductor packages, molded products, electric and electronic devices, and semiconductor packages that include the epoxy compound. The structure of the epoxy compound is represented by Formula 1: E1-M1-L1-M2-L2-M3-L3-A-L3-M3-L2-M2-L1-M1-E2. In this formula, M1, M2, M3, L1, L2, L3, A, E, p, q, r, x, y, and z are defined in the detailed description of the patent.

Career Highlights

Hyejeong Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to work on advancements in semiconductor technology. His expertise in high-thermal conductive materials has positioned him as a valuable asset in the industry.

Collaborations

He has collaborated with notable coworkers, including Kyeong Pang and In Gun Kim, contributing to various projects within the semiconductor field.

Conclusion

Hyejeong Lee's innovative work in high-thermal conductive epoxy compounds showcases his commitment to advancing semiconductor technology. His contributions are significant in enhancing the performance and efficiency of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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