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For the Inventor, By the Inventor

Goyang-si, South Korea

Hye-Seung Yu

USPTO Granted Patents = 9 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 19(Granted Patents)


Company Filing History:

goldMedal9 out of 131,906 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2016-2021

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9 patents (USPTO):Explore Patents
1. 10938416 - Memory device including parity error detection circuit (2021-03-02),
2. 10908212 - Semiconductor memory device including a shift register (2021-02-02),
3. 10509070 - Short circuit detecting device of stacked memory chips and method thereof (2019-12-17),
4. 10243584 - Memory device including parity error detection circuit (2019-03-26),
5. 10078110 - Short circuit detecting device of stacked memory chips and method thereof (2018-09-18),
6. 9966126 - Delay circuit of a semiconductor memory device, a semiconductor memory device and a method of operating the same (2018-05-08),
7. 9959935 - Input-output circuit for supporting multiple-input shift register (MISR) function and memory device including the same (2018-05-01),
8. 9870808 - Memory device for performing calibration operation (2018-01-16),
9. 9379693 - Self bias buffer circuit and memory device including the same (2016-06-28),

Title: Hye-Seung Yu: Innovator in Memory Device Technology

Introduction

Hye-Seung Yu is a prominent inventor based in Goyang-si, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 9 patents. His work focuses on enhancing memory technology, particularly in error detection and data processing.

Latest Patents

One of Hye-Seung Yu's latest patents is a memory device that includes a parity error detection circuit. This innovative memory device features a parity check circuit that performs checks on data sampled according to a data strobe signal, which does not include a post-amble. Additionally, the device incorporates a mask circuit that generates a parity error signal based on the results of the parity check, outputting this signal during a time period determined by the burst length of the data. Another notable patent is for a semiconductor memory device that includes a shift register. This device consists of first bumps positioned along a first direction and second bumps positioned in parallel to the first bumps. The first and second registers are sequentially connected, forming a shift register that enhances data processing capabilities.

Career Highlights

Hye-Seung Yu is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory device innovation, contributing to advancements that have a significant impact on the industry.

Collaborations

Hye-Seung Yu has collaborated with notable colleagues, including Hyunui Lee and Won-Joo Yun. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Hye-Seung Yu's contributions to memory device technology exemplify his dedication to innovation in the field. His patents reflect a commitment to improving data processing and error detection, making him a key figure in the semiconductor industry.

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