Suwon, South Korea

Hyang-ja Yang

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyang-ja Yang. Retrieved from https://idiyas.com/inventor/hyang-ja-yang-23om5nv4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: Hyang-ja Yang: Innovator in Semiconductor Technology

Introduction

Hyang-ja Yang is a notable inventor based in Suwon, South Korea. She has made significant contributions to the field of semiconductor technology, particularly in the area of electrostatic discharge protection circuits. With a total of 2 patents, her work has been instrumental in advancing the efficiency and reliability of semiconductor devices.

Latest Patents

Hyang-ja Yang's latest patents include innovative designs that enhance the performance of semiconductor memory devices. One of her patents, titled "Electrostatic discharge protection circuit," describes a semiconductor memory device that conserves chip area by jointly connecting transistors adjacent to each other. This device features first and second electrostatic discharge protection MOSFET transistors, which have drains connected to adjacent pads, defining a first active area. A common source is arranged between the two transistor areas, creating a second active area shared by both transistors. The design allows for connection to a single power supply at the gates and sources, while also sharing common active ground lines.

Another significant patent is the "Electrostatic discharge structure of semiconductor device." This structure includes a semiconductor substrate doped with P-type impurities, an N-type well, and a P-type pocket well. It also features an N-type active guardline and a P-type active guardline, both doped to higher concentrations. The design ensures that even if a negative voltage due to electrostatic charge is temporarily applied to the drain region of the NMOS transistor, it prevents malfunctions in the internal circuitry of the P-type semiconductor substrate.

Career Highlights

Hyang-ja Yang is currently employed at Samsung Electronics Co., Ltd., where she continues to innovate in semiconductor technology. Her work has garnered attention for its practical applications and contributions to the industry.

Collaborations

Hyang-ja has collaborated with notable colleagues, including Hee-chul Park and Hee-Choul Park, who have also contributed to advancements in semiconductor technology.

Conclusion

Hyang-ja Yang's contributions to semiconductor technology through her patents demonstrate her innovative spirit and commitment to enhancing device reliability. Her work at Samsung Electronics Co., Ltd. continues to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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