The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Dec. 24, 1996
Hyang-ja Yang, Suwon, KR;
Hee-choul Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An electrostatic discharge structure of a semiconductor device is provided. The structure includes a semiconductor substrate doped with P-type impurities; an N-type well formed in a predetermined region of the semiconductor substrate; a P-type pocket well formed in a predetermined region of the N-type well; an N-type active guardline formed in the surface of the N-type well and doped to a concentration higher than that of the N-type well; a P-type active guardline formed in the surface of the P-type pocket well and doped to a concentration higher than that of the P-type pocket well; and an NMOS transistor formed in a surface of the P-type pocket well. Accordingly, even though a negative voltage due to electrostatic charge is temporarily applied to the drain region of the NMOS transistor, a malfunction of an internal circuitry formed in a P-type semiconductor substrate can be prevented.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile